DDT-CJS-RS2-1 Datasheet, PDF (5/15 Pages) DOMINANT Semiconductors – LED InGaN

DOMINANT ^TM
Semiconductors
Innovating Illumination
Electrical Characteristics at Ta=25⁰C
Part Number
Vf @ If = 20 mA
Min. (V)
Typ. (V)
Max. (V)
DDC, DDB
2.9
3.2
3.8
DDT
2.9
3.4
4.0
Forward Voltage, Vf is measured with an accuracy of ± 0.1 V.
InGaN : DDx-xJx
Vr @ Ir = 10 µA
Min. (V)
5.0
5.0
Absolute Maximum Ratings
DC Forward Current
Peak Pulse Current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse Voltage
ESD Threshold (HBM)
LED Junction Temperature
Operating Temperature
Storage Temperature
Power Dissipation (at room temperature)
Thermal Resistance Junction/Solder Point
Maximum Value
20
DDB = 300
DDC, DDT = 400
5
2
125
-40 … +100
-40 … +100
85
230
Unit
mA
mA
V
kV
˚C
˚C
˚C
mW
K/W
5
07/05/2007 V12.0