DDW-DJD-V2W-1 Datasheet, PDF (4/12 Pages) DOMINANT Semiconductors – LED InGaN White High Brightness

DOMINANT ^TM
Semiconductors
Innovating Illumination
Relative Luminous Intensity Vs. Forward Current
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
Forward Current, mA
InGaN White High Brightness : DDx-DJx
Forward Current Vs Forward Voltage
40
35
30
25
20
15
10
5
0
1 1.5 2 2.5 3 3.5 4 4.5 5
Forward Voltage, V
Maximum Forward Current Vs. Temperature
25
20
15
10
5
0
0 10 20 30 40 50 60 70 80 90
Ambient Temperature
Radiation Pattern
Relative Intensity Vs. Wavelength
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400 450 500 550 600 650 700 750 800
Wavelength, nm
4
15/05/2007 V(O)