DDS-EJS-S2T-1 Datasheet, PDF (3/12 Pages) DOMINANT Semiconductors – LED AlInGaP

DOMINANT ^TM
Semiconductors
Innovating Illumination
Electrical Characteristics at Ta=25˚C
Part Number
Vf @ If = 20mA
Min. (V)
Typ. (V)
Max. (V)
DDx-EJ
1.8
2.0
2.6
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
AlInGaP : DDx-EJS
Vr @ Ir = 10uA
Min. (V)
12
Vf Bining (Optional)
Vf @ If = 20mA
01
Forward Voltage (V)
1.55 ... 1.85
02
1.85 ... 2.15
03
2.15 ... 2.45
04
Forward voltage, Vf is measured with an accuracy of ± 0.1V.
Please consult sales and marketing for special part number to incorporate Vf binning.
2.45 ... 2.65
Absolute Maximum Ratings
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.1)
Reverse voltage
ESD Thereshold (HBM)
LED juction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Maximum Value
30
1000
12
2
125
-40 … +100
-40 … +100
78
Unit
mA
mA
V
kV
˚C
˚C
˚C
mW
3
15/11/2005 V2.0