DDB-KJS-LM2-1-I1 Datasheet, PDF (3/12 Pages) DOMINANT Semiconductors – LED GaN

DOMINANT ^TM
Semiconductors
Innovating Illumination
Absolute Maximum Ratings
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage (IR = 10 µA)
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Thermal resistance
- Junction / ambient, R_{th JA}
- Junction / solder point, R_{th JS}
(Mounting on FR4 PCB, pad size >= 16 mm² per pad)
GaN : DDx-KJS-I1
Maximum Value
20
200
5
2000
125
-40 … +100
-40 … +100
85
500
280
Unit
mA
mA
V
V
˚C
˚C
˚C
mW
K/W
K/W
Characteristics (Ta = 25˚C)
Temperature coefficient of ^O _{dom (typ)}
I_F = 10mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of V_{F (typ)}
I_F = 10mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of I_{V (typ)}
I_F = 10mA; 0 ˚C <= T <= 100 ˚C
Symbol
TC_{O dom (typ)}
Part Number
DDB-KJS
Value
0.01
TC_V
TC_IV
DDB-KJS
DDB-KJS
-2.60
-0.30
Unit
nm / K
mV / K
mcd / K
3
27/06/2007 V(O)