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RB521CS-30 Datasheet, PDF (2/2 Pages) Rohm – Schottky barrier diode | |||
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RB521CS-30
RATINGS AND CHARACTERISTIC CURVES
1000
Ta=125â
100
Ta=75â
10
1
0.1
Ta=-25â
Ta=25â
10000
1000
100
10
1
0.01
0.1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
0.01
0
100
Ta=125â
Ta=75â
Ta=25â
10
Ta=-25â
f=1MHï½
10
20
30
REVERSE VOLTAGEï¼VR(V)
VR-IR CHARACTERISTICS
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
10
10
Ifsm
1cyc
15
8.3ms
Ifsm
8.3ms 8.3ms
1cyc
10
5
5
Ifsm
t
5
AVE:3.90A
0
IFSM DISRESION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
0.1
0.1
Rth(j-a)
0.08
0.08
Rth(j-c)
D=1/2
0.06
100
Mounted on epoxy board
Sin(θï¼180)
IM=10mA
IF=100mA
0.04
DC
0.06
0.04
D=1/2
DC
1ms time
0.02
0.02
Sin(θï¼180)
300us
10
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.1
0.2
AVERAGE RECTIFIED
FORWARD CURRENTï¼Io(A)
Io-Pf CHARACTERISTICS
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0.3
0.2 DC
D=1/2
0.1
0A
Io
0V
t
VR
D=t/T
VR=15V
T Tj=125â
Sin(θï¼180)
0
0
25
50
75 100 125
AMBIENT TEMPERATURE:Ta(â)
Derating Curveï¾(Io-Ta)
0.3
0A
0V
0.2
DC
D=1/2
0.1
Sin(θï¼180)
Io
VR
t
D=t/T
VR=15V
T Tj=125â
0
0
25 50 75 100 125
CASE TEMPARATURE:Tc(â)
Derating Curveï¾(Io-Tc)
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