MURF3005PT Datasheet, PDF (1/2 Pages) Diotech Company. – SUPER FAST RECOVERY SILICON RECTIFIER

MURF3005PT THRU MURF3060PT
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 30.0 Ampere
FEATURES
Glass Passivated Die Construction
Super-Fast Switching
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
MECHANICAL DATA
Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
TO-3P
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
3.6± 0.15
PIN
1
2
3
3.0± 0.1
2.2± 0.15
1.2± 0.15
5.4± 0.15
0.6± 0.1
Dimensions in millimeters
PIN 1 -
PIN 3 -
2.4± 0.2
+
Case, PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T_C = 100°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
Forward Voltage
@I_F = 15.0A
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Symbol
MURF
3005PT
MURF
3010PT
MURF
3015PT
MURF
3020PT
MURF
3030PT
MURF
3040PT
MURF
3060PT
Unit
VRRM
VRWM
50
100
150
200
300
400
600
V
VR
VR(RMS)
35
70
105
140
210
280
420
V
IO
30
A
IFSM
V FM
IRM
trr
Cj
Tj, TSTG
0.975
35
150
300
10
500
-65 to +150
1.3
50
120
A
1.7
V
µA
nS
pF
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.