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MMBT3904 Datasheet, PDF (1/6 Pages) NXP Semiconductors – NPN switching transistor | |||
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MMBT3904
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
Voltage - 40 Volts Power Dissipation - 300 mWatt
FEATURES
â Epitaxial Planar Die Construction
â Complementary PNP Type Available
(MMBT3906)
â Ideal for Medium Power Amplification and
Switching
MECHANICAL DATA
â Case: SOT-23, Molded Plastic
â Case Material - UL Flammability Rating
Classification 94V-0
â Terminals: Solderable per MIL-STD-202,
Method 208
â Marking: Device Code
â Weight: 0.008 grams (approx.)
A
C
BC
B TOP VIEW E
E
D
G
H
K
M
J
L
3
C
B
E
1
2
Top View
3
Collector
3
Collector
1
Base
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
0
8
All Dimensions in mm
1
2
Base Emitter
2
Emitter
â MAXIMUM RATING (Ta = 25â)
Parameter
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Symbol
VCEO
VCBO
VEBO
IC
âTHERMAL CHARACTERISTICS
Total Device Dissipation,
FR-5 Board (Note1) @TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctionâtoâAmbient(Note 1)
Total Device Dissipation,
Alumina Substrate (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctionâtoâAmbient(Note 2)
Junction and Storage temperature
1. FRâ5 = 1.0Ã0.75Ã0.062 in.
2. Alumina = 0.4Ã0.3Ã0.024 in. 99.5% alumina.
PD
RÎJA
PD
RÎJA
TJ,Tstg
Limits
40
60
6
200
225
1.8
556
300
2.4
417
â55â¼+150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/â
â/W
mW
mW/â
â/W
â
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