KBP2005G Datasheet, PDF (1/2 Pages) Diodes Incorporated – 2.0A GLASS PASSIVATED BRIDGE RECTIFIER

KBP2005G THRU KBP210G
SINGLE PHASE SILICON BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere
FEATURES
● Ideal for printed circuit board
● Surge overload rating: 60A peak
● High case dielectric strength
● High temperature soldering guaranteed:
260°C/10 seconds at 5lbs. (2.3kg) tension
MECHANICAL DATA
● Case: UL-94 Class V-0 recognized Flame Retardant Epoxy
● Terminals: Plated leads solderable per
MIL-STD 202, method 208
● Mounting Position: Any
● Weight: 1.70 g
● Marking: Type Number
KBP
.460(11.68)
.420(10.6)
AC
.035(0.9)
.028(0.7)
.5 (12.7)
MIN
.160(4.1)
.140(3.6)
SPACING
.600(15.24)
.560(14.22)
.153(3.9)
.146(3.7)
.050(1.27)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA = 25^oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum DC Forward Voltage Drop per Bridge
Element at 2.0A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
@TA = 25^oC
@TA = 125^oC
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
KBP2005G KBP201G KBP202G KBP204G KBP206G KBP208G KBP210G UNITS
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
50
100
200
400
600
800
1000
V
2.0
A
IFSM
60
A
VF
IR
TJ,TSTG
1.1
V
10.0
μA
500
-55 to + 150
0_C