GDZJ2 Datasheet, PDF (1/5 Pages) Diotech Company. – 500mW EPITAXIAL ZENER DIODE

GDZJ - SERIES
500mW EPITAXIAL ZENER DIODE
FEATURES
• Planar die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• High temperature soldering : 260°C /10 seconds at terminals
• Glass package has Underwriters Laboratory Flammability
Classification
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Molded Glass DO-35
• Terminals: Axial leads, solderable per MIL-STD-202G, Method 208
• Polarity: See Diagram Below
• Mounting position:Any
• Weight: 0.13 gram
DO-35
All Dimensions in mm
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25℃)
Symbols
Zener current see table "Characteristics"
Power dissipation at TA=25℃
Ptot
Junction temperature
TJ
Storage temperature range
TSTG
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
Value
500
175
-65 to +175
Units
mW
℃
℃
ELECTRCAL CHARACTERISTICS(TA=25℃)
Symbols
Min
Typ
Thermal resistance junction to ambient
RthA
Forward voltage at IF=100mA
VF
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
Max
Units
0.3
K / mW
1.0
V