DB4 Datasheet, PDF (1/3 Pages) Wing Shing Computer Components – SILICON BIDIRECTIONAL DIAC

DB4
BIDIRECTIONAL TRIGGER DIODE
Features
● V_BO : 40V
● Breakover voltage range : 35 to 45V
DO-35
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
Applications
Functioning as a trigger diode with a fixed voltage
reference, the DB4 can be used in conjunction
with triacs for simplified gate control circuits or as
a starting element in fluorescent lamp ballasts.
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
All Dimensions in mm
Absolute Maximum Ratings
(Limiting values)
Parameter
Symbol
Value
Unit
Repetitive peak on-state current (tp=20μ s F=120 Hz)
I_TRM
2
A
Operating junction temperature range
T_j
-40 ~ +125
℃
Storage temperature range
T_stg
-40 ~ +125
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
(T_j=25℃ unless otherwise specified)
Parameter
Symbol
Test Conditions
Value Unit
Breakover voltage*
V_BO
C=22nF**
MIN.
35
V
TYP.
40
MAX.
45
Breakover voltage symmetry |V_BO1-V_BO2|
Dynamic breakover voltage*
△V
Output voltage*
V_O
Breakover current*
I_BO
Rise time*
tr
Leakage current*
I_R
*Applicable to both forward and reverse directions.
**Connected in parallel to the device.
C=22nF**
V_BO and V_F at 10mA
see diagram 2(R=20Ω )
C=22nF**
see diagram 3
V_R=0.5V_BO max
MAX. ±3
V
MIN.
5
V
MIN.
5
V
MAX.
50
μA
MAX.
2
μs
MAX.
10
μA