B1S Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes)

B1S THRU B10S
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
Reverse Voltage - 100 to 1000 Volts Forward Current - 0.8 Ampere
FEATURES
● _{Surge overload rating - 30 Amperes peak}
● Ideal for printed circuit board
● Reliable low cost construction utilizing molded
● _{Glass passivated device}
● Polarity symbols molded on body
MECHANICAL DATA
● Case : MBS, Molded Plastic
● Epoxy : Device has UL flammability classification 94V-0
● Mounting Position : Any
● Weight : 0.22 grams (approx.)
● Marking : Type Number
MBS
.067(1.7)
.057(1.3)
.051(1.3)
.035(0.9)
.275(7.0)MAX
.165(4.2)
.150(3.8)
.031(0.8)
.019(0.5) .106(2.7)
.09(2.3)
.014(.35)
.006(.15)
.193(4.9)
.177(4.5)
.106(2.7)
.09(2.3)
.008(0.2)
.043(1.1)
.027(0.7)
.067(1.7)
.057(1.3)
1
2
3
4
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Symbol B1S
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
V RRM
VRWM
100
VR
VR(RMS)
70
Average Rectified Output Current (Note 1) @T_A = 40°C
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I²t Rating for Fusing (t < 8.3ms)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
@I_F = 0.8A
@T_A = 25°C
@T_A = 125°C
Typical Junction Capacitance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
I FSM
I²t
VFM
I RM
Cj
R JA
R JL
Tj, TSTG
Note: 1. Mounted on glass epoxy PC board with 1.3mm² solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
B2S
200
140
B4S B6S
400
600
280
420
0.8
30
10
1.1
5.0
500
25
85
20
-55 to +150
B8S B10S Unit
800 1000
V
560
700
V
A
A
A²s
V
µA
pF
°C/W
°C