1N60 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – GOLD BONDED GERMANIUM DIODE

1N60 THRU 1N60P
SMALL SIGNAL SCHOTTKY DIODE
Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere
FEATURES
● Metal-on-silicon junction, majority carrier conduction
● High current capability, Low forward voltage drop
● Extremely low reverse current Ir
● Ultra speed switching characteristics
● Small temperature coefficient of forward characteristics
● Satisfactory Wave detection efficiency
● For use in RECORDER TV RADIO TELEPHONE as
detectors, super high speed switching c rcuits,
small current rectifier
MECHANICAL DATA
Case: DO-35 glass case
Polarity : Color band denotes cathode end
Mounting Position : Any
Weight : 0.13 grams
DO-35
All Dimensions in mm
ABSOLUTE RATINGS(LIMITING VALUES)
Symblos
VRRM
IF
IFSM
TSTG /TJ
TL
Parameters
Repetitive Peak Reverse Voltage
Forward Continuous Current
TA =25 C
Peak Forward Surge Current(t=1S)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
Value
1N60
1N60P
40
45
30
50
150
400
-65 to+125
230
Units
Volts
mA
mA
C
C
ELECTRICAL CHARACTERISTICS
Symblos
Parameters
Test Conditions
Value
Min.
Typ.
Max.
Units
VF
Forward Voltage
IR
Reverse Current
CJ
Junction Capacitance
IF=1mA
IF=30mA
IF=200mA
VR=15V
VR=1V f=1MHz
VR=10V f=1MHz
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
Detection Efficiency(See diagram 4) VI=3V f=30MHz CL=10pF RL=3.8k
0.32
0.24
0.65
0.65
1.0
5.0
2.0
6.0
60
0.5
0.5
1.0
1.0
5.0
10.0
Volts
A
pF
trr
R JA
Reverse Recovery time
Junction Ambient Thermal Resistance
IF=IR=1mA Irr=1mA Rc=100
1
400
ns
C/W