1N4148 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

1N4148 / 1N4448
SMALL SIGNAL SWITCHING DIODE
FEATURES
● Silicon epitaxial planar diode
● _{Switching diodes}
● 500mw power dissipation
● _{High temperature soldering guaranteed}
250℃/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: DO-34\DO-35 glass sealed envelope.
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.003 ounce, 0.09 grams(DO-34)
0.005 ounce, 0.14 grams(DO-35)
DO-34(GLASS)
DO-35(GLASS)
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.106 (2.9)
MAX
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
0.017(0.42)
TYP
1.0 2(26.0)
MIN.
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings ( TA=25 C Unless otherwise noted)
Characteristic
Non-Repetitive Peak Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current ⁽¹⁾
Non-Repetitive Peak Forward Surge Current
@t=1.0us
Power Dissipation
Thermal Resistance Junction to Ambient
Operating and Strorage Temperature Range
Symbol
VRM
VPWM
VRWM
VR
IO
IFSM
Pd
R_θJA
TJ,TSTG
1N4148 / 1N4448
100
75
150
2.0
500
300
-65 to +175
Electrical Characteristics ( TA=25 C Unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
IR = 100ua
Forward Voltage
1N4148 IF=10 mA
1N4448 I_F=5 mA
I_F=100 mA
Leakage Current
VR=20V
VR=75V
VR =75V, Tj=150 C
Junction Capacitance
Reverse Recovery Time
IF=10 mA, IR=1mA, VR=6V, RL=100Ω
Symbol
V(BR)R
VF
IR
Cj
TRR
Min
100
0.62
-
-
-
-
-
Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature.
Max
-
1.0
0.72
1.0
25
5
50
4
4
Unit
V
V
mA
A
mW
K/W
C
Unit
V
V
µA
PF
nS