ZY1_11 Datasheet, PDF (3/3 Pages) Diotec Semiconductor – Silicon-Power-Zener Diodes (non-planar technology)

ZY1 ... ZY200 (2 W)
120
[%]
100
80
60
40
20
P_tot
0
0 T_A 50
100
150 [°C]
Power dissipation versus ambient temperature ¹)
Verlustleistung in Abh. von d. Umgebungstemp.¹)
10²
[A]
10
T_j = 125°C
T_j = 25°C
1
10^-1
I_F
10^-2
30a-(1a-1.1v)
0.4 V_F 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
[pF]
V_R = 0V
V_R = 4V
T_j = 25°C
f = 1.0 MHz
150
1
[mA]
100
Tj = 25°C
5,6
6,8
I_Zmax
8,2
6,2
7,5
9,1
I _ZT
V_R = 20V
V_R = 40V
C_j
V_Z
[V]
Junction capacitance vs. zener voltage (typical)
Sperrschichtkapazität in Abh. v.d. Zenerspg. (typ.)
50
[K/W]
50
40
30
20
L
10
R_thL
0
0L 4
8
12 [mm]
Typ. thermal resistance vs lead length
Typ. therm. Widerst. in Abh. der Anschlusslänge
50
I_Z
I_Z = 5 mA
0
0
V_Z
2
3
4
5
6
7
8 [V] 10
Typical breakdown characteristic – tested with pulses
Typische Abbruchspannung – gemessen mit Impulsen
10
18 24 30 36 43
51 56 62 68 75 82
91 100
I_Zmax
T_j = 25°C
I _ZT
Typical breakdown characteristic – tested with pulses
Typische Abbruchspannung – gemessen mit Impulsen
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