UFT800A_13 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Superfast Efficient Rectifiers . Single Diode

Characteristics
Type
Typ
Tj = 25°C
UFT800A ... UFT800D
UFT800F ... UFT800J
Reverse recovery time
Sperrverzugszeit
trr [ns] ³)
< 25
< 35
UFT800A ... UFT800J
Kennwerte
Reverse recovery time
Sperrverzugszeit
trr [ns] ⁴)
< 35
< 45
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Tj = 25°C VR = VRRM
IR
RthC
< 5 µA
< 2.5 K/W
120
[%]
100
80
60
40
20
I_FAV
0
0 T_C 50
100
150 [°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
10²
[A]
10
T_j = 125°C
1
T_j = 25°C
10^-1
I_F
10^-2
200a-(5a-0.95v)
0.4 V_F 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
3 IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A
4 IF = 1.0 A, di/dt = -50 A/µs, VR = 30 V
2
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