TIP32_07 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – General Purpose Silicon Power Transistors

Characteristics (Tj = 25°C)
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 30 V (B open)
TIP32
TIP32A
- ICE0
- ICE0
- VCE = 60 V (B open)
TIP32B
TIP32C
- ICE0
- ICE0
- VCE = 40 V (B-E short)
- VCE = 60 V (B-E short)
TIP32
TIP32A
- ICES
- ICES
- VCE = 80 V (B-E short)
- VCE = 100 V (B-E short)
TIP32B
TIP32C
- ICES
- ICES
Emitter-Base cutoff current
- VEB = 5 V, (C open)
- IEB0
Gain-Bandwidth Product – Transitfrequenz
- VCE = 10 V, - IC = 0.5 A, f = 1 MHz
fT
Small signal current gain – Kleinsignal-Stromverstärkung
- VCE = 10 V, - IC = 0.5 A, f = 1 kHz
hfe
- VCE = 10 V, - IC = 0.5 A, f = 1 MHz
hfe
Switching times – Schaltzeiten (between 10% and 90% levels)
turn-on time
turn-off time
- ICon = 1 A
ton
- IBon = IBoff = 100 mA
toff
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M4
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
TIP32 ... TIP32C
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
300 nA
–
–
300 nA
–
–
300 nA
–
–
300 nA
–
–
200 nA
–
–
200 nA
–
–
200 nA
–
–
200 nA
–
–
1 mA
3 MHz
–
–
20
–
–
3
–
–
–
300 ns
–
–
1 µs
–
< 63 K/W ¹)
< 3 K/W
9 ± 10% lb.in.
1 ± 10% Nm
TIP31 ... TIP31C
1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
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