TIP120A Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Si-Epitaxial PlanarTransistors

Darlington Transistors
TIP120, TIP121, TIP122
Characteristics (T_j = 25°C)
Kennwerte (T_j = 25°C)
Min.
Typ.
Max.
Emitter-Base cutoff current – Emitterreststrom
I_C = 0, V_EB = 5 V
I_EB0
–
Collector saturation voltage – Kollektor-Sättigungsspg. ¹)
–
2 mA
I_C = 3 A, I_B = 12 mA
I_C = 5 A, I_B = 20 mA
V_CEsat
–
V_CEsat
–
Base-Emitter on-voltage – Basis-Emitter-Spannung ¹)
–
2V
–
4V
I_C = 3 A, V_CE = 3 V
V_BEon
–
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
–
2.5 V
V_CE = 3 V, I_C = 0.5 A
V_CE = 3 V, I_C = 3 A
h_FE
1000
–
–
h_FE
1000
–
–
Small signal current gain – Kleinsignal-Stromverstärkung
V_CE = 4 V, I_C = 3 A, f = 1 MHz
h_fe
4
–
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V_CB = 10 V, I_E = i_e = 0, f = 100 kHz
C_CB0
–
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
–
200 pF
R_thA
62.5 K/W ²)
R_thC
2 K/W
M 4 9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
TIP125, TIP126, TIP127
Equivalent Circuit – Ersatzschaltbild
B1
C2
T2
T1
E2
1_{) Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%}
2_{) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case}
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2