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| SBCT2020_13 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Schottky Barrier Rectifier Diodes . Common Cathode | |||
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Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht - Gehäuse
Tj = 25°C
Tj = 100°C
VR = VRRM
SBCT2020 ... SBCT20100
Kennwerte
IR
< 300 µA
< 7 mA
RthC
< 1.5 K/W 1)
120
[%]
100
80
60
40
20
IFAV
0
0 TC 50
100
150 [°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses
10 2
[A]
SBCT2020...SBCT2045
10
SBCT2050, SBCT2060
1
SBCT2080, SBCT20100
10 -1
IF
10 -2
0
VF
0.4
0.6
[V] 1.0
Forward ch aracteristics (typ ical valu es)
Durch lasskenn linien (typ ische Werte)
1 Per device (parallel operation) â Pro Bauteil (Parallelbetrieb)
2
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© Diotec Semiconductor AG
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