PZT2907 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – PNP Silicon Switching Transistors

PZT2907 / PZT2907A
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- IC = 0.1 mA, - VCE = 10 V
- IC = 1 mA, - VCE = 10 V
- IC = 10 mA, - VCE = 10 V
- IC = 150 mA, - VCE = 10 V
- IC = 500 mA, - VCE = 10 V
Gain-Bandwidth Product – Transitfrequenz
PZT2907
hFE
PZT2907A hFE
PZT2907
hFE
PZT2907A hFE
PZT2907
hFE
PZT2907A hFE
PZT2907
hFE
PZT2907A hFE
PZT2907
hFE
PZT2907A hFE
- IC = 20 mA, - VCE = 20 V, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
Switching times – Schaltzeiten
delay time
rise time
- VCC = 30 V, - IC = 150 mA,
td
- IB1 = 15 mA
tr
storage time
fall time
- VCC = 6 V, - IC = 150 mA,
ts
- IB1 = - IB2 = 15 mA
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
RthS
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
35
–
–
75
–
–
50
–
–
100
–
–
75
–
–
100
–
–
100
–
300
100
–
300
30
–
–
50
–
–
200 MHz
–
–
–
–
8 pF
–
–
30 pf
–
–
10
–
–
40
–
–
80
–
–
30
< 93 K/W ¹)
< 27 K/W
PZT2222, PZT2222A
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2
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