PT800A_13 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Silicon Rectifier Diodes . Single Diode

Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
PT800A ... PT800M
Tj = 25°C VR = VRRM
IR
Kennwerte
< 5 µA
RthC
< 2.5 K/W
120
[%]
100
80
60
40
20
I_FAV
0
0 T_C 50
100
150 [°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
10²
[A]
10
T_j = 125°C
1
T_j = 25°C
10^-1
I_F
10^-2
200a-(5a-0.95v)
0.4 V_F 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
2
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