MMBTRC101SS Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTRC101SS ... MMBTRC106SS
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
VO = 5 V, IO = 10 mA
Output cutoff current – Ausgangs-Reststrom
InpuVt^O c=ur5re0nVt – Eingangsstrom
VI = 5 V
Output voltage – Ausgangs-Spannung
InpuI^Ot ^{=vo1lt0agmeA(,onII})=– ^{0E.i5ngmaAngsspannung} (Ein)
VO = 0.2 V, IO = 5 mA
Input voltage (off) – Eingangs-Spannung (Aus)
VO = 5 V, IO = 0.1 mA
Input resistor tolerance – Toleranz Eingangswiderstand
Resistance ratio – Widerstandsverhältnis
Transition Frequency – Transitfrequenz (Transistor)
VO = 10 V, IO = 5 mA
GI
MMBTRC101SS
MMBTRC102SS
MMBTRC103SS
MMBTRC104SS
MMBTRC105SS
MMBTRC106SS
IO(off)
II
MMBTRC101SS
MMBTRC102SS
MMBTRC103SS
MMBTRC104SS
MMBTRC105SS
MMBTRC106SS
VO(on)
VI(on)
MMBTRC101SS
MMBTRC102SS
MMBTRC103SS
MMBTRC104SS
MMBTRC105SS
MMBTRC106SS
VI(off)
..C101...C104..
..C105...C106..
R1
R2/R1
MMBTRC101SS
MMBTRC102SS
MMBTRC103SS
MMBTRC104SS
MMBTRC105SS
MMBTRC106SS
fT
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
30
–
–
50
–
–
70
–
–
80
–
–
80
–
–
80
–
–
–
–
500 nA
–
–
1.8 mA
–
–
0.88 mA
–
–
0.36 mA
–
–
0.18 mA
–
–
3.6 mA
–
–
1.8 mA
–
–
0.3 V
–
–
2V
–
–
2.4 V
–
–
3V
–
–
5V
–
–
1.1 V
–
–
1.3 V
1V
–
–
0.5 V
–
–
-30%
+30%
0.8
0.8
0.8
0.8
0.026
0.055
1.2
1.2
1.2
1.2
0.087
0.185
–
200 MHz
–
1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2
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