MMBTA92 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP high-voltage transistor

Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 10 V, - IC = 1 mA
- VCE = 10 V, - IC = 10 mA
- VCE = 10 V, - IC = 30 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 10 V, - IC = 20 mA, f = 100 MHz
Collector-Base capacitance – Kollektor-Basis-Kapazität
- VCB = 20 V, IE =ie = 0, f = 1 MHz
MMBTA92
MMBTA93
Thermal resistance junction – ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
MMBTA92 / MMBTA93
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE
25
–
–
hFE
40
–
–
hFE
25
–
–
fT
50 MHz
–
–
CCB0
–
CCB0
–
–
6 pF
–
8 pF
RthA
< 420 K/W ¹)
MMBTA42, MMBTA43
MMBTA92 = 2D
MMBTA93 = 2E
120
[%]
100
80
60
40
20
P_tot
0
0 T_A 50
100
150 [°C]
Power dissipation versus ambient temperature ¹)
Verlustleistung in Abh. von d. Umgebungstemp.¹)
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2
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