MMBT4403 Datasheet, PDF (2/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT4403
Characteristics (Tj = 25°C)
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung ²)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VBEsat
- VBEsat
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 35 V, - VEB = 0,4 V
- ICEX
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 35 V, - VEB = 0,4 V
- IEBV
Gain-Bandwidth Product – Transitfrequenz
- IC = 20 mA, - VCE = 10 V, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
storage time
fall time
td
- ICon = 10 mA
tr
- IBon = 1 mA
IBoff = 1 mA
ts
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking - Stempelung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
0.75 V
–
0.95 V
–
–
1.3 V
–
–
100 nA
–
–-
100 nA
200 MHz
–
–
–
–
8.5 pF
–
–
30 pf
–
–
15 ns
–
–
20 ns
–
–
225 ns
–
–
30 ns
< 420 K/W ¹)
MMBT4401
MMBT4403 = 2T
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2
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