F12K120_13 Datasheet, PDF (2/3 Pages) Diotec Semiconductor – Protectifiers - LowVF-Rectifier with Overvoltage Protection

F12K120
Characteristics
Leakage current
Sperrstrom
Tj = 25°C VR = VWM
Tj = 100°C VR = VWM
ESD rating according to JESD22-A114 / contact discharge C = 100pF R = 1.5kΩ
ESD-Festigkeit gemäß JESD22-A114 / Kontaktentladung
Peak pulse power dissipation
Impuls-Verlustleistung
10/1000µs pulse ¹) TA = 25°C
Max. reverse peak pulse current
8/20µs pulse ²)
Max. Impuls-Strom in Sperr-Richtung
TA = 25°C
Reverse recovery time
Sperrverzug
IF = 0.5 A through/über
IR = 1 A to IR = 0.25 A
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to leads
Wärmewiderstand Sperrschicht – Anschlussdraht
Kennwerte
IR
< 5 µA
IR
< 200 µA
20 kV
PPPM
1500 W
IPPM
230 A
trr
< 300 ns
RthA < 10 K/W ³)
RthL
< 2 K/W
120
[%]
100
80
60
40
20
I_FAV
0
0 T_C 50
100
150 [°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses
10³
[A]
10²
T_j = 125°C
10
T_j = 25°C
1
I_F
10^-1
400a-(5a-0,8v)
0.4 V_F 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 See curve I_PP = f (t) 10/1000µs – Siehe Kurve I_PP = f (t) 10/1000µs
2 See curve I_PP = f (t) 8/20µs – Siehe Kurve I_PP = f (t) 8/20µs
3 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
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