ES1A_14 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Superfast Efficient Surface Mount Rectifier Diodes

Characteristics
Type
Typ
ES1A...ES1D
ES1F...ES1G
ES1J
Reverse recovery time
Sperrverzugszeit
t_rr [ns] ¹)
< 15
< 25
< 35
ES1A ... ES1J
Kennwerte
Forward voltage
Durchlass-Spannung
V_F [V] at / bei I_F [A]
< 0.92
1
< 1.3
1
< 1.7
1
Leakage current
Sperrstrom
Tj = 25°C VR = VRRM
IR
Tj = 100°C VR = VRRM
IR
Typ. junction capacitance – Typ. Sperrschichtkapazitat
4.0V, 1MHz CJ
120
[%]
100
10
[A]
ES1A...D
1
80
60
0.1
< 5 µA
< 100 µA
10 pF
ES1F...G
ES1J
40
20
I_FAV
0
0 T_A 50
100
150 [°C]
Rated forward current versus ambient temperature¹)
Zul. Richtstrom in Abh. von der Umgebungstemp.¹)
10^-2
I_F
10^-3
T_j = 25°C
V_F
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
[µA]
1
T_j = 125°C
T_j = 85°C
T_j = 25°C
[pF]
T_j = 25°C
f = 1.0 MHz
10^-1
10^-2
I_R
10^-3
0
V_RRM
40
60 [%] 100
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
C_j
V_R
[V]
Junction capacitance vs. reverse voltage (typical)
Sperrschichtkapazität in Abh. v.d. Sperrspg. (typ.)
1 I_F = 0.5 A through/über I_R = 1 A to/auf I_R = 0.25 A
2
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