DBI25-04A Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Three-Phase Si-Bridge-Rectifiers

DBI25-04A ... DBI25-16A
Characteristics
Forward voltage – Durchlass-Spannung
Leakage current – Sperrstrom
Tj = 25°C
Tj = 25°C
Tj = 150°C
IF = 12.5 A
VR = VRRM
Isolation voltage terminals to case – Isolationsspg. Anschlüsse zum Gehäuse
Thermal resist. junction to ambient – Wärmewiderst. Sperrschicht – Umgebung
Thermal resistance junction to case – Wärmewiderstand Sperrschicht – Gehäuse
Admissible mounting torque
Zulässiges Anzugsdrehmoment
Kennwerte
VF
< 1.05 V ¹)
IR
< 10 µA ¹)
IR
< 1500 µA ¹)
VISO
> 2500 V
RthA
< 50 K/W ¹)
RthC
< 4.3 K/W ¹)
M4 9 ± 10% lb.in.
1 ± 10% Nm
120
[%]
100
80
60
10³
[A]
10²
T_j = 125°C
T_j = 25°C
10
40
20
I_FAV
0
0 T_C 50
100
150 [°C]
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
1
I_F
10^-1
350a-(12.5a-1,05v)
0.4 V_F 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
100
[%]
10
Z_th
R_th
1 ₁₀-4 _[s]
10^-3
10^-2
10^-1
1
[t_p] 10
Relative transient thermal impedance vs. pulse duration (typical)
Relativer transienter Wärmewiderstand über Impulsdauer (typisch)
1 Valid per diode – Gültig pro Diode
2
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