BFS19 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN medium frequency transistor

High Frequency Transistors
Characteristics (T_j = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
V_CE = 10 V, I_C = 1 mA
h_FE
Base-Emitter voltage – Basis-Emitter-Spannung ¹)
V_CE = 10 V, I_C = 1 mA
Gain-Bandwidth Product – Transitfrequenz
V_BEon
V_CE = 5 V, I_C = 10 mA, f = 100 MHz
f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V_CB = 10 V, I_E = i_e = 0, f = 1 MHz
C_CB0
Feedback Capacitance – Rückwirkungskapazität
V_CB = 10 V, I_C = i_c = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
BFS 19
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
65
–
225
650 mV
–
750 mV
–
260 MHz
–
–
1 pF
–
–
0.85 pF
–
R_thA
420 K/W ²)
Marking - Stempelung
BFS 19 = F2
1_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
2_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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