BFN22 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

High Voltage Transistors
Characteristics (T_j = 25/C)
Base saturation voltage – Basis-Sättigungsspannung ¹)
I_C = 10 mA, I_B = 1 mA
V_BEsat
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
V_CE = 20 V, I_C = 25 mA
h_FE
Gain-Bandwidth Product – Transitfrequenz
V_CE = 10 V, I_C = 10 mA, f = 100 MHz
f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V_CB = 30 V, I_E = i_e = 0, f = 1 MHz
C_CB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BFN 22
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
1V
50
–
–
–
100 MHz
–
–
0.8 pF
–
R_thA
420 K/W ²)
BFN 23
Marking - Stempelung
BFN 22 = HB
1_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
2_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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