BCP54_07 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Surface Mount General Purpose Si-Epi-Planar Transistors

Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCB = 30 V, Tj = 125°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
DC current gain ratio of the complementary pairs
Verhältnis der Stromverstärkungen komplementärer Paare
l IC l = 150 mA, l VCE l = 2 V
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCP54 ... BCP56
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
ICB0
–
ICB0
–
–
100 nA
–
10 µA
IEB0
–
–
100 nA
fT
–
130 MHz
–
hFE1/hFE2
RthA
RthS
–
–
1.6
< 93 K/W ¹)
< 27 K/W
BCP51 ... BCP53
120
[%]
100
80
60
40
20
P_tot
0
0 T_A 50
100
150 [°C]
Power dissipation versus ambient temperature ¹)
Verlustleistung in Abh. von d. Umgebungstemp.¹)
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2
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