BCF32 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN general purpose transistor

General Purpose Transistors
Characteristics (T_j = 25/C)
Base saturation voltage – Basis-Sättigungsspannung ¹)
I_C = 10 mA, I_B = 0.5 mA
V_BEsat
I_C = 50 mA, I_B = 2.5 mA
V_BEsat
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
V_CE = 5 V, I_C = 10 :A
BCF 32 h_FE
BCF 33 h_FE
V_CE = 5 V, I_C = 2 mA
BCF 32 h_FE
BCF 33 h_FE
Base-Emitter voltage – Basis-Emitter-Spannung ¹)
V_CE = 5 V, I_C = 2 mA
Gain-Bandwidth Product – Transitfrequenz
V_BEon
V_CE = 5 V, I_C = 10 mA, f = 100 MHz
f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V_CB = 10 V, I_E = i_e = 0, f = 1 MHz
C_CB0
Noise figure – Rauschzahl
V_CE = 5 V, I_C = 200 :A, R_G = 2 kS,
f = 1 kHz, )f = 200 Hz
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCF 32, BCF 33
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
750 mV
–
–
850 mV
–
–
150
–
–
270
–
200
–
450
420
–
800
550 mV
–
700 mV
100 MHz
–
–
–
2.5 pF
–
–
1.2 dB
4 dB
R_thA
420 K/W ²)
BCF 29, BCF 30
Marking – Stempelung
BCF 32 = D7
BCF 33 = D8
1_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
2_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
21