BC856_11 Datasheet, PDF (2/2 Pages) Unisonic Technologies – SWITCHING AND AMPLIFIER APPLICATIONS

BC856 ... BC860
Characteristics (Tj = 25°C)
Base-Emitter-voltage – Basis-Emitter-Spannung ²)
- VCE = 5 V, IC = - 2 mA
- VCE = 5 V, IC = - 10 mA
- VBE
- VBE
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCE = 30 V, Tj = 125°C, (E open)
- ICBO
- ICBO
Emitter-Base cutoff current
- VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- IEBO
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA
RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz
BC856 ... BC858 F
BC859 ... BC860 F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking of available current gain groups
Stempelung der lieferbaren
Stromverstärkungsgruppen
BC856A = 3A
BC856B = 3B
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
600 mV
–
750 mV
–
–
720 mV
–
–
15 nA
–
–
4 µA
–
–
100 nA
100 MHz
–
–
–
–
4.5 pF
–
9 pF
–
–
2 dB
10 dB
–
1.2 dB
4 dB
< 420 K/W ¹)
BC846 ... BC850
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC858A = 3E
BC858B = 3F
BC858C = 3G
BC860B = 3F
BC860C
= 3G or 4G
BC859B = 3F
BC859C
= 3G or 4C
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2
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