BC327 Datasheet, PDF (2/2 Pages) Motorola, Inc – Amplifier Transistors(PNP)

General Purpose Transistors
Characteristics (T_j = 25/C)
Collector-Emitter cutoff current – Kollektorreststrom
- V_CE = 45 V
BC 327
- V_CE = 25 V
BC 328
- V_CE = 45 V, T_j = 125/C
BC 327
- V_CE = 25 V, T_j = 125/C
BC 328
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
- I_CES
- I_CES
- I_CES
- I_CES
- I_C = 10 mA
BC 327
BC 328
- I_C = 0.1 mA
BC 327
BC 328
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
- V_(BR)CES
- V_(BR)CES
- V_(BR)CES
- V_(BR)CES
- I_E = 0.1 mA
- V_(BR)EB0
Collector saturation volt. – Kollektor-Sättigungsspannung
- I_C = 500 mA, - I_B = 50 mA
- V_CEsat
Base-Emitter voltage – Basis-Emitter-Spannung
- V_CE = 1 V, - I_C = 300 mA
Gain-Bandwidth Product – Transitfrequenz
- V_BE
- V_CE = 5 V, - I_C = 10 mA, f = 50 MHz
f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V_CB = 10 V, I_E = i_e = 0, f = 1 MHz
C_CB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 327 / BC 328
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
2 nA 100 nA
–
2 nA 100 nA
–
–
10 :A
–
–
10 :A
20 V
–
–
45 V
–
–
30 V
–
–
50 V
–
–
5V
–
–
–
–
0.7 V
–
–
1.2 V
–
100 MHz
–
–
12 pF
–
R_thA
200 K/W ¹)
BC 337 / BC 338
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 327-16 BC 327-25 BC327-40
BC 328-16 BC 328-25 BC328-40
1_{) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case}
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
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