1N1183 Datasheet, PDF (2/2 Pages) Vishay Siliconix – Power Silicon Rectifier Diodes, 35 A/40 A/60 A

1N 1183 ... 1N 1190, 1N 3766, 1N 3768
PBY 301 ... PBY 307
Characteristics
Forward voltage – Durchlaßspannung
Leakage current – Sperrstrom
T_j = 25/C
T_j = 25/C
Thermal resistance junction to stud
Wärmewiderstand Sperrschicht – Gehäuse
I_F = 100 A
V_R = V_RRM
Recommended mounting torque
Empfohlenes Anzugsdrehmoment
Kennwerte
V_F
< 1.5 V
I_R
< 500 :A
R_thC
< 1 K/W
26 ± 10% lb.in.
3 ± 10% Nm
2
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