PN2222 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – General Purpose Transistor

PN2222 / PN2222A
NPN
Version 2006-09-12
CBE
2 x 2.54
Dimensions - Maße [mm]
PN2222 / PN2222A
Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
Emitter-Base-voltage – Emitter-Basis-Spannung
C open VEBO
Power dissipation – Verlustleistung
Ptot
Collector current – Kollektorstrom (dc)
IC
Junction temperature – Sperrschichttemperatur
Tj
Storage temperature – Lagerungstemperatur
TS
Grenzwerte (TA = 25°C)
PN2222
(2N2222)
PN2222A
(2N2222A)
30 V
40 V
60 V
75 V
5V
6V
625 mW ¹)
600 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ²)
IC = 0.1 mA,
IC = 1 mA,
IC = 10 mA,
IC = 150 mA,
IC = 500 mA,
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
PN2222
PN2222A
h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA
Small signal current gain
Kleinsignal-Stromverstärkung
PN2222A
PN2222A
Input impedance – Eingangs-Impedanz
PN2222A
PN2222A
Output admittance – Ausgangs-Leitwert
PN2222A
PN2222A
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE
35
–
–
hFE
50
–
–
hFE
75
–
–
hFE
100
–
300
hFE
30
–
–
hFE
40
–
–
hfe
50
hfe
75
–
300
–
375
hie
2 kΩ
–
8 kΩ
hie
0.25 kΩ
–
1.25 kΩ
hoe
5 µS
hoe
25 µS
–
35 µS
–
200 µS
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
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