PCT1600A_13 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Silicon Rectifier Diodes . Common Cathode

PCT1600A ... PCT1600M
PCT1600A ... PCT1600M
Silicon Rectifier Diodes – Common Cathode
Silizium-Gleichrichterdddioden – Gemeinsame Kathode
Version 2013-05-07
1.2^±0.2
10.1^±0.3
Ø 3.8^±0.2
4
4
4.5^±0.2
Type
Typ
123
2.67^±0.2
0.42 ^±0.1
1.3^±0.1
0.8^±0.2
123
2.54^±0.1
Dimensions - Maße [mm]
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
16 A
50...1000 V
TO-220AB
1.8 g
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] ¹)
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V] ¹)
PCT1600A
PCT1600B
PCT1600D
PCT1600G
PCT1600J
PCT1600K
PCT1600M
50
100
200
400
600
800
1000
50
100
200
400
600
800
1000
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
VF [V] ¹), Tj = 25°C
IF = 5 A
IF = 8 A
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
Max. average forward current, R-load
Dauergrenzstrom mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 100°C
IFAV
TC = 100°C
IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i²t
Tj
TS
8 A ¹)
16 A ²)
30 A ³)
135/150 A ¹)
90 A²s ¹)
-50...+150°C
-50...+175°C
1 Per diode – Pro Diode
2 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
3 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
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