KYZ35A05_07 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Silicon-Press-Fit-Diodes - High Temperature Diodes

KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6
KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6
Silicon-Press-Fit-Diodes – High Temperature Diodes
Silizium-Einpress-Dioden – Hochtemperatur-Dioden
Version 2006-04-22
Nominal Current
Nennstrom
Ø 16^±0.5
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Metal press-fit case with glass seal
Metall-Einpressgehäuse mit Glas-Durchführung
Ø 12.77^±0.04
Weight approx. – Gewicht ca.
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
Dimensions - Maße [mm]
Standard packaging: bulk
Standard Lieferform: lose im Karton
35 A
50 ... 600 V
10 g
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
Cathode
KYZ35A05
KYZ35K05
KYZ35A1
KYZ35K1
KYZ35A2
KYZ35K2
KYZ35A3
KYZ35K3
KYZ35A4
KYZ35K4
KYZ35A6
KYZ35K6
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
300
400
600
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
360
480
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 100°C IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i²t
Tj
TS
35 A
130 A ¹)
360/400 A
660 A²s
-50...+175°C
-50...+175°C
1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C
© Diotec Semiconductor AG
http://www.diotec.com/
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