DB3_07 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Bidirectional Si-Trigger-Diodes

DB3 ... DB4
Version 2006-04-27
Ø 1.9
Ø 0.52
DB3 ... DB4
Bidirectional Si-Trigger-Diodes (DIAC)
Bidirektionale Si-Triggerdioden (DIAC)
Breakover voltage
Durchbruchspannung
Peak pulse current
Max. Triggerimpuls
Glass case
Glas-Gehäuse
Weight approx.
Gewicht ca.
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
28 ... 45 V
±2A
DO-35
SOD-27
0.13 g
Maximum ratings
Power dissipation
Verlustleistung
Peak pulse current (120 Hz pulse repetition rate)
Max. Triggerstrom (120 Hz Puls-Wiederholrate)
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TA = 50°C
Ptot
tp ≤ 10 µs
IPM
Tj
TS
Grenzwerte
150 mW ¹)
± 2 A ¹)
-50...+100°C
-50...+175°C
Characteristics
Breakover voltage
Durchbruchspannung
dV/dt = 10 V/µs
Breakover current – Durchbruchstrom
Asymmetry of breakover voltage
Unsymmetrie der Durchbruchspannung
Foldback voltage – Spannungs-Rücksprung
ΔI = IBO to/auf IF = 10 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
DB3
DB4
V = 98% VBO
|V(BO)F – V(BO)R|
dV/dt = 10 V/µs
VBO
VBO
IBO
ΔVBO
ΔVF/R
RthA
Kennwerte
28 ... 36 V
35 ... 45 V
< 200 µA
< 3.8 V
>5V
< 300 K/W ¹)
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
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