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BYZ50A22 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Silicon Protectifiers with TVS characteristics High-temperature diodes | |||
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Silicon Protectifiers
with TVS characteristics
High-temperature diodes
BYZ 50A22 ... BYZ 50A47
BYZ 50K22 ... BYZ 50K47
Silizium Schutzgleichrichter
mit Begrenzereigenschaften
Hochtemperaturdioden
à 12.75
à 11 ±0.1
1.3
à 13 ±01
Dimensions / MaÃe in mm
Nominal current â Nennstrom
50 A
Nominal breakdown voltage
Nominale Abbruch-Spannung
19.8 ... 51.7 V
Metal press-fit case with plastic cover
Metall-EinpreÃgehäuse mit Plastik-Abdeckung
Weight approx. â Gewicht ca.
10 g
Casting compound has UL classification 94V-0
VerguÃmasse UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
BYZ 50A22
BYZ 50A27
BYZ 50A33
BYZ 50A39
BYZ 50A47
Cathode
BYZ 50K22
BYZ 50K27
BYZ 50K33
BYZ 50K39
BYZ 50K47
Breakdown voltage
Abbruch-Spannung
IT = 100 mA
VBRmin [V] VBRmax
19.8
24.2
24.3
29.7
29.7
36.3
35.1
42.9
42.3
51.7
Reverse voltage
Sperrspannung
IR = 5 :A
VR [V]
> 17.8
> 21.8
> 26.8
> 31.6
> 38.1
Grenzwerte
Max. clamping voltage
Max. Begrenzerspanng.
at / bei IPP, tp = 1m s
VC [V]
IPP [A]
31,9
242
39,1
192
47,7
160
56,4
134
67,8
112
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 150/C
Peak forward surge current, 50 / 60 Hz half sine-wave
StoÃstrom für eine 50 / 60 Hz Sinus-Halbwelle
TA = 25/C
Rating for fusing â Grenzlastintegral, t <10 ms
Forward voltage â DurchlaÃspannung
Tj = 25/C
TA = 25/C
IF = 50 A
Operating junction temperature â Sperrschichttemperatur
Storage temperature â Lagerungstemperatur
IFAV
50 A
IFSM 400 / 450 A
i2t
800 A2s
VF
< 1.1 V
Tj â 50â¦+215/C
TS â 50â¦+215/C
04.09.2002
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