BYZ35A22 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Silicon Protectifiers with TVS characteristics High-temperature diodes

Silicon Protectifiers
with TVS characteristics
High-temperature diodes
BYZ 35A22 ... BYZ 35A47
BYZ 35K22 ... BYZ 35K47
Silizium Schutzgleichrichter
mit Begrenzereigenschaften
Hochtemperaturdioden
Ø 12.75
Ø 11 ^±0.1
1.3
Ø 13 ^±01
Dimensions / Maße in mm
Nominal current – Nennstrom
35 A
Nominal breakdown voltage
Nominale Abbruch-Spannung
19.8 ... 51.7 V
Metal press-fit case with plastic cover
Metall-Einpreßgehäuse mit Plastik-Abdeckung
Weight approx. – Gewicht ca.
10 g
Casting compound has UL classification 94V-0
Vergußmasse UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
BYZ 35A22
BYZ 35A27
BYZ 35A33
BYZ 35A39
BYZ 35A47
Cathode
BYZ 35K22
BYZ 35K27
BYZ 35K33
BYZ 35K39
BYZ 35K47
Breakdown voltage
Abbruch-Spannung
I_T = 100 mA
V_BRmin [V] V_BRmax
19.8
24.2
24.3
29.7
29.7
36.3
35.1
42.9
42.3
51.7
Reverse voltage
Sperrspannung
I_R = 5 :A
V_R [V]
> 17.8
> 21.8
> 26.8
> 31.6
> 38.1
Grenzwerte
Max. clamping voltage
Max. Begrenzerspanng.
at / bei I_PP, t_p = 1m s
V_C [V]
I_PP [A]
31,9
161
39,1
128
47,7
106
56,4
89
67,8
75
Max. average forward rectified current, R-load T_C = 150/C I_FAV
Dauergrenzstrom in Einwegschaltung mit R-Last
35 A
Peak forward surge current, 50 / 60 Hz half sine-wave
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
T_A = 25/C I_FSM
360 / 400 A
Rating for fusing, t <10 ms
Grenzlastintegral, t <10 ms
T_A = 25/C
i²t
660 A²s
Forward voltage
Durchlaßspannung
T_j = 25/C I_F = 35 A
V_F
< 1.1 V
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T_j – 50…+215/C
T_S – 50…+215/C
07.01.2003
1