BYP60A05_14 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – High Temperature Diodes

BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6
BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6
Silicon-Press-Fit-Diodes – High Temperature Diodes
Silizium-Einpress-Dioden – Hochtemperatur-Dioden
Version 2014-08-18
Ø 12.75
Nominal Current
Nennstrom
Ø 11^±0.5
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Metal press-fit case with plastic cover
1.3
Metall-Einpressgehäuse mit Plastik-Abdeckung
Weight approx.
Gewicht ca.
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
Dimensions - Maße [mm]
Standard packaging: bulk
Standard Lieferform: lose im Karton
60 A
50 ... 600 V
10 g
Maximum ratings
Grenzwerte
Type / Typ
Wire to / Draht an
Anode
Cathode
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
BYP60A05
BYP60K05
50
60
BYP60A1
BYP60K1
100
120
BYP60A2
BYP60K2
200
240
BYP60A3
BYP60K3
300
360
BYP60A4
BYP60K4
400
480
BYP60A6
BYP60K6
600
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 150°C
IFAV
60 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
190 A ¹)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
450/500 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i²t
1000 A²s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
-50...+215°C
TS
-50...+215°C
1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C
© Diotec Semiconductor AG
http://www.diotec.com/
1