BYP25A05 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Silicon Press-Fit-Diodes High-temperature diodes

BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6
BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6
Silicon-Press-Fit-Diodes – High Temperature Diodes
Silizium-Einpress-Dioden – Hochtemperatur-Dioden
Version 2006-04-20
Ø 12.75
Ø 11^±0.1
Nominal Current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Metal press-fit case with plastic cover
1.3
Metall-Einpressgehäuse mit Plastik-Abdeckung
Weight approx.
Gewicht ca.
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
Ø 13^±01
Dimensions - Maße [mm]
Standard packaging: bulk
Standard Lieferform: lose im Karton
25 A
50 ... 600 V
10 g
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
Cathode
BYP25A05
BYP25K05
BYP25A1
BYP25K1
BYP25A2
BYP25K2
BYP25A3
BYP25K3
BYP25A4
BYP25K4
BYP25A6
BYP25K6
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
300
400
600
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
360
480
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 150°C IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i²t
Tj
TS
25 A
90 A ¹)
270/300 A
375 A²s
-50...+215°C
-50...+215°C
1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C
© Diotec Semiconductor AG
http://www.diotec.com/
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