BSV52 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

BSV 52
NPN
Switching Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
2.9 ^±0.1
1.1
0.4
3
Type
Code
1
2
1.9
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open V_CE0
Collector-Base-voltage
E open V_CB0
Emitter-Base-voltage
C open V_EB0
Power dissipation – Verlustleistung
P_tot
Collector current – Kollektorstrom (dc)
I_C
Peak Collector current – Kollektor-Spitzenstrom I_CM
Peak Base current – Basis-Spitzenstrom
I_BM
Junction temp. – Sperrschichttemperatur
T_j
Storage temperature – Lagerungstemperatur
T_S
Grenzwerte (T_A = 25/C)
BSV 52
12 V
20 V
5V
250 mW ¹)
100 mA
200 mA
100 mA
150/C
- 65…+ 150/C
Characteristics (T_j = 25/C)
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, V_CB = 20 V
I_CB0
I_E = 0, V_CB = 20 V, T_j = 125/C
I_CB0
Emitter-Base cutoff current – Emitterreststrom
I_C = 0, V_EB = 4 V
I_EB0
Collector saturation volt. – Kollektor-Sättigungsspg. ¹)
I_C = 10 mA, I_B = 0.3 mA
I_C = 10 mA, I_B = 1 mA
I_C = 50 mA, I_B = 5 mA
V_CEsat
V_CEsat
V_CEsat
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
400 nA
–
–
30 :A
–
–
100 nA
–
–
300 mV
–
–
250 mV
–
–
400 mV
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
18
01.11.2003