BSR15 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistors

BSR 15, BSR 16
Switching Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2.9 ^±0.1
1.1
0.4
3
Type
Code
1
2
1.9
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- V_CE0
- V_CB0
- V_EB0
P_tot
- I_C
- I_CM
- I_BM
T_j
T_S
Grenzwerte (T_A = 25/C)
BSR 15
BSR 16
40 V
60 V
60 V
5V
250 mW ¹)
600 mA
800 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (T_j = 25/C)
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, - V_CB = 50 V
I_E = 0, - V_CB = 50 V, T_j = 150/C
BSR 15
I_E = 0, - V_CB = 60 V
I_E = 0, - V_CB = 60 V, T_j = 150/C
BSR 16
Emitter-Base cutoff current – Emitterreststrom
- I_CB0
- I_CB0
- I_CB0
- I_CB0
I_C = 0, - V_EB = 5 V
- I_EB0
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
20 nA
–
–
20 :A
–
–
10 nA
–
–
10 :A
–
–
50 nA
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
8
01.11.2003