BSR13 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistors

BSR 13, BSR 14
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
2.9 ^±0.1
1.1
0.4
3
Type
Code
1
2
1.9
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open V_CE0
Collector-Base-voltage
E open V_CB0
Emitter-Base-voltage
C open V_EB0
Power dissipation – Verlustleistung
P_tot
Collector current – Kollektorstrom (dc)
I_C
Peak Collector current – Kollektor-Spitzenstrom I_CM
Peak Base current – Basis-Spitzenstrom
I_BM
Junction temp. – Sperrschichttemperatur
T_j
Storage temperature – Lagerungstemperatur
T_S
Grenzwerte (T_A = 25/C)
BSR 13
BSR 14
30 V
40 V
60 V
75 V
5V
6V
250 mW ¹)
800 mA
800 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (T_j = 25/C)
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, V_CB = 50 V
I_E = 0, V_CB = 50 V, T_j = 150/C
BSR 13
I_CB0
I_CB0
I_E = 0, V_CB = 60 V
I_E = 0, V_CB = 60 V, T_j = 150/C
BSR 14
I_CB0
I_CB0
Emitter-Base cutoff current – Emitterreststrom
I_C = 0, V_EB = 5 V
BSR 13 I_EB0
BSR 14 I_EB0
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
30 nA
–
–
10 :A
–
–
10 nA
–
–
10 :A
–
–
30 nA
–
–
10 nA
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
6
01.11.2003