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BSP40 Datasheet, PDF (1/2 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER | |||
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BSP 40 ... BSP 43
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
6.5±0.2
3±0.1
4
1.65
1 0.7
2.3
2
3
3.25
Dimensions / MaÃe in mm
1 = B 2, 4 = C 3 = E
Power dissipation â Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. â Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.3 W
SOT-223
0.04 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open VCE0
Collector-Base-voltage
E open VCB0
Emitter-Base-voltage
C open VEB0
Power dissipation â Verlustleistung
Ptot
Collector current â Kollektorstrom (dc)
IC
Peak Collector current â Kollektor-Spitzenstrom ICM
Peak Base current â Basis-Spitzenstrom
IBM
Junction temperature â Sperrschichttemperatur Tj
Storage temperature â Lagerungstemperatur
TS
Grenzwerte (TA = 25/C)
BSP 40
BSP 41
BSP 42
BSP 43
60 V
80 V
70 V
90 V
5V
1.3 W 1)
1A
2A
200 mA
150/C
- 65â¦+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current â Kollektorreststrom
IE = 0, VCB = 60 V
ICB0
IE = 0, VCB = 60 V, Tj = 150/C
ICB0
Emitter-Base cutoff current â Emitterreststrom
IC = 0, VEB = 5 V
IEB0
Collector saturation volt. â Kollektor-Sättigungsspg. 2)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
â
â
100 nA
â
â
50 :A
â
â
100 nA
â
â
250 mV
â
â
500 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem AnschluÃ
2) Tested with pulses tp = 300 :s, duty cycle # 2% â Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
4
01.11.2003
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