BF554 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits)

BF 554
NPN
High Frequency Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open V_CE0
Collector-Base-voltage
E open V_CB0
Emitter-Base-voltage
C open V_EB0
Power dissipation – Verlustleistung
P_tot
Collector current – Kollektorstrom (dc)
I_C
Peak Collector current – Kollektor-Spitzenstrom I_CM
Junction temperature – Sperrschichttemperatur T_j
Storage temperature – Lagerungstemperatur
T_S
Grenzwerte (T_A = 25/C)
BF 554
20 V
30 V
5V
250 mW ¹)
30 mA
30 mA
150/C
- 65…+ 150/C
Characteristics (T_j = 25/C)
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, V_CB = 20 V
I_CB0
I_E = 0, V_CB = 20 V, T_j = 100/C
I_CB0
DC current gain – Kollektor-Basis-Stromverhältnis ²)
V_CE = 10 V, I_C = 1 mA
h_FE
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
100 nA
–
–
10 :A
60
–
250
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
2_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
2
01.11.2003