BCW66F Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Surface Mount General Purpose Si-Epi-Planar Transistors

BCW66F ... BCW66H
BCW66F ... BCW66H
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-07-31
2.9 ^±0.1
1.1
0.4
3
Type
Code
1
2
1.9
Dimensions - Maße [mm]
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO
Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO
Collector-Base-voltage – Kollektor-Basis-Spannung C open VEB0
Power dissipation – Verlustleistung
Ptot
Collector current – Kollektorstrom (dc)
IC
Peak Collector current – Kollektor-Spitzenstrom
ICM
Peak Base current – Basis-Spitzenstrom
IBM
Junction temperature – Sperrschichttemperatur
Tj
Storage temperature – Lagerungstemperatur
TS
Grenzwerte (TA = 25°C)
BCW66F ... BCW66H
45 V
75 V
5V
250 mW ¹)
800 mA
1000 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ²⁾
VCE = 10 V, IC = 100 µA
BCW66F
hFE
BCW66G
hFE
BCW66H
hFE
VCE = 1 V, IC = 10 mA
BCW66F
hFE
BCW66G
hFE
BCW66H
hFE
VCE = 1 V, IC = 100 mA
BCW66F
hFE
BCW66G
hFE
BCW66H
hFE
VCE = 2 V, IC = 500 mA
BCW66F
hFE
BCW66G
hFE
BCW66H
hFE
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
35
–
–
50
–
–
80
–
–
75
–
–
100
–
–
180
–
–
100
160
250
160
250
400
250
350
630
–
35
–
–
60
–
–
100
–
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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