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BCV71 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors
BCV 71, BCV 72
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
2.9 ±0.1
1.1
0.4
3
Type
Code
1
2
1.9
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open VCE0
Collector-Base-voltage
E open VCB0
Emitter-Base-voltage
C open VEB0
Power dissipation – Verlustleistung
Ptot
Collector current – Kollektorstrom (DC)
IC
Peak Collector current – Kollektor-Spitzenstrom ICM
Junction temperature – Sperrschichttemperatur Tj
Storage temperature – Lagerungstemperatur
TS
Grenzwerte (TA = 25/C)
BCV 71, BCV 72
60 V
80 V
5V
250 mW 1)
100 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 20 V
ICB0
IE = 0, VCB = 20 V, Tj = 100/C
ICB0
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
IEB0
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 :A
VCE = 5 V, IC = 2 mA
BCV 71 hFE
BCV 72 hFE
BCV 71 hFE
BCV 72 hFE
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
–
–
100 nA
–
–
10 :A
–
–
100 nA
–
90
–
–
150
–
110
–
220
200
–
450
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
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01.11.2003