BCV26 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP Darlington transistors

BCV26, BCV46
Darlington Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-01-20
Power dissipation – Verlustleistung
2.9 ^±0.1
1.1
0.4
3
Type
Code
1
2
1.9
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B1 2 = E2 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
Collector-Base-voltage
V_BE = 0
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- V_CES
- V_CB0
- V_EB0
P_tot
- I_C
- I_CM
- I_B
T_j
T_S
Grenzwerte (T_A = 25/C)
BCV26
BCV46
30 V
60 V
40 V
80 V
10 V
250 mW ¹)
500 mA
800 mA
100 mA
150/C
- 65…+ 150/C
Characteristics (T_j = 25/C)
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, - V_CB = 30 V
I_E = 0, - V_CB = 60 V
BCV26
BCV46
- I_CB0
- I_CB0
Emitter-Base cutoff current – Emitterreststrom
I_C = 0, - V_EB = 10 V
- I_EB0
Collector saturation volt. – Kollektor-Sättigungsspg. ²)
- I_C = 100 mA, - I_B = 0.1 mA
- V_CEsat
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
100 nA
–
–
100 nA
–
–
100 nA
–
–
1V
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
2_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
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