|
BCP29 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) | |||
|
BCP 29, BCP 49
Darlington Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
6.5±0.2
3±0.1
4
1.65
1 0.7
2.3
2
3
3.25
Dimensions / MaÃe in mm
1 = B1 2, 4 = C 3 = E2
Power dissipation â Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. â Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.5 W
SOT-223
0.04 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open VCE0
Collector-Base-voltage
E open
VCB0
Emitter-Base-voltage
C open VEB0
Power dissipation â Verlustleistung
Ptot
Collector current â Kollektorstrom (DC)
IC
Peak Collector current â Kollektor-Spitzenstrom ICM
Base current â Basisstrom (DC)
IB
Peak Base current â Basisstrom
IBM
Junction temperature â Sperrschichttemperatur Tj
Storage temperature â Lagerungstemperatur
TS
Grenzwerte (TA = 25/C)
BCP 29
BCP 49
30 V
60 V
40 V
80 V
10 V
1.5 W 1)
500 mA
800 mA
100 mA
200 mA
150/C
- 65â¦+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current â Kollektorreststrom
IE = 0, VCB = 30 V
BCP 29 ICB0
IE = 0, VCB = 60 V
BCP 49 ICB0
IE = 0, VCB = 30 V, TA = 150/C BCP 29 ICB0
IE = 0, VCB = 60 V, TA = 150/C BCP 49 ICB0
Emitter-Base cutoff current â Emitterreststrom
IC = 0, VEB = 5 V
IEB0
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
â
â
100 nA
â
â
100 nA
â
â
10 :A
â
â
10 :A
â
â
100 nA
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem AnschluÃ
4
01.11.2003
|
▷ |